III-V semiconductor nanowires (vertical)
Our group is interested in the growth and application of III-V nanowires grown with metalorganic chemical vapor deposition (MOCVD) on silicon, graphene, TMDC, etc. for heterogeneous integration. In stark contrast to thin-film growth, semiconductor nanowires are amenable to direct and high quality heteroepitaxial crystal growth of materials with highly mismatched lattice constants and coefficients of thermal expansion. Our group has developed three different methods for the growth of high performance III-V nanowires (direct epitaxy, van der Waals epitaxy, and seeded-VLS epitaxy), characterized the III-V and substrate interface, and demonstrated nanowire-based solar cell devices.
van der Waals Epitaxy of III-V Nanowires on Graphene and TMDC
Related publications
- K. P. Bassett, P.K. Mohseni, and X. Li, "Evolution of GaAs nanowire geometry in selective area epitaxy," Appl. Phys. Lett. 106, 133102 (2015).[pdf]
- P. K. Mohseni, A. Behnam, J. D. Wood, X. Zhao, K. J. Yu, J. A. Rogers, J. W. Lyding, E. Pop, and X. Li, "Monolithic III-V Nanowire Solar Cells on Graphene via Direct van der Waals Epitaxy", Advanced Materials 26, 3755-3760 (2014). [pdf]
- J. C. Shin, A. Lee, P. K. Mohseni, D. Y. Kim, L. Yu, J. H. Kim, H. J. Kim, W. J. Choi, D. Wasserman, K. J. Choi, and X. Li, ''Wafer-Scale Production of Uniform InAsP Nanowire Array on Silicon for Heterogeneous Integration'', ACS Nano 7, 5463-5471 (2013). [pdf]
- P. K. Mohseni, A. Behnam, J. D. Wood, C. Engllish, J. W. Lyding, E. Pop and X. Li, "In(x)Ga(1-x)As Nanowire Growth on Graphene: van der Waals Epitaxy Induced Phase Segregation", Nano Letters 13, 1153-1161 (2013).[pdf]
- J. C. Shin, P. K. Mohseni, K. J. Yu, S. Tomasulo, K. H. Montgomery, M. L. Lee, J. A. Rogers, and X. Li, "Heterogeneous Integration of InGaAs Nanowires on the Rear Surface of Si Solar Cells for Efficiency Enhancement" ACS Nano, 6, 11074-11079(2012).[pdf]
- J. C. Shin, K. J. Choi, D. Y. Kim, W. J. Choi, and X. Li, "Characteristics of Strain-Induced InxGa1-xAs Nanowires Grown on Si(111) Substrates,:" Crystal Growth and Design, 12, 2994 (2012).[pdf]
- J. C. Shin, K. H. Kim, K. J. Yu, H. Hu, L. Yin, C. Ning, J. A. Rodgers, J. Zuo, and X. Li, "In(x)Ga(1-x)As Nanowires on Silicon: One-Dimensional Heterogeneous Epitaxy, Bandgap Engineering, and Photovoltaics", Nano Letters 11, 4831-4838 (2011). [pdf]
Vertical III-V nanowire growth with MOCVD: direct VS epitaxy
Vertical III-V nanowire growth with MOCVD: van der Waals epitaxy
Vertical III-V nanowire growth with MOCVD: seeded-VLS epitaxy
